Title

Diffusion of 18 elements implanted into thermally grown SiO2

Authors

Authors

H. G. Francois-Saint-Cyr; F. A. Stevie; J. M. McKinley; K. Elshot; L. Chow;K. A. Richardson

Abbreviated Journal Title

J. Appl. Phys.

Keywords

ION MASS-SPECTROMETRY; SILICON DIOXIDE; SELF-DIFFUSION; NETWORK OXYGEN; OXIDE; SIO2-FILMS; FLUORINE; AMBIENT; SILVER; SODIUM; Physics, Applied

Abstract

Diffusion data are presented for 18 elements implanted in SiO2 layers thermally grown on silicon and annealed at temperatures ranging from 300 to 1000degreesC. Most species studied, (e.g., Be, B, Al, Sc, Ti, V, Zn, Ga, and Mo), showed negligible diffusion over the examined temperature range. In general, this study has shown that the diffusivity of dopants or impurities in SiO2 is significantly smaller than that in silicon. However we also observed that several elements (e.g., Rb and In) have a higher diffusivity in SiO2 than in Si. Because Ga and In are both used as sources for focused ion beam analyses, the lack of Ga diffusion and the movement of In in SiO2 is of interest. (C) 2003 American Institute of Physics.

Journal Title

Journal of Applied Physics

Volume

94

Issue/Number

12

Publication Date

1-1-2003

Document Type

Article

Language

English

First Page

7433

Last Page

7439

WOS Identifier

WOS:000186969900007

ISSN

0021-8979

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