Title
RF MOSFET: recent advances, current status and future trends
Abbreviated Journal Title
Solid-State Electron.
Keywords
INTEGRATED-CIRCUIT; CMOS; TECHNOLOGY; TRANSISTOR; DESIGN; CONCEPTION; FREQUENCY; MODEL; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter
Abstract
Recent advances in complementary metal oxide semiconductor (CMOS) processing, continuous scaling of gate length, and progress in silicon on insulator have stirred serious discussions on the suitability of metal-oxide semiconductor field-effect transistors (MOSFETs) for RF/microwave applications. This paper covers the recent advances and current status of mainstream CMOS as the dominating technology in very large scale integration, future trends of RF MOSFETs, and applications of MOSFETs in RF electronics. Aspects of RF MOSFET modeling are also addressed. Despite some lingering debates, the prospects for RF MOS with operating frequencies in the lower GHz range are very promising. (C) 2003 Elsevier Ltd. All rights reserved.
Journal Title
Solid-State Electronics
Volume
47
Issue/Number
11
Publication Date
1-1-2003
Document Type
Review
Language
English
First Page
1881
Last Page
1895
WOS Identifier
ISSN
0038-1101
Recommended Citation
"RF MOSFET: recent advances, current status and future trends" (2003). Faculty Bibliography 2000s. 3895.
https://stars.library.ucf.edu/facultybib2000/3895
Comments
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