Transmission electron microscopy sample preparation of tin oxide nanowire sensor using focused ion-beam milling technique
Abbreviated Journal Title
GAS-SENSING PROPERTIES; THIN-FILMS; NO2; Chemistry, Analytical; Electrochemistry; Instruments & Instrumentation; Physics, Applied
Transmission electron microscopy (TEM) sample preparation using a focused ion-beam (FIB) milling technique, utilizing a Ga+ ion beam at 30 kV, is systematically demonstrated, for the first time, for a nanocrystalline, highly porous indium oxide-doped tin oxide (In-SnO2) nanowire thin-film gas sensor. The In-SnO2 nanowires are deposited on a sapphire (Al2O3) Substrate by a catalyst-assisted heteroepitaxy technique. The subsequent FIB and TEM characterization of the present nanowire thin-film gas sensor show that, under the given processing conditions, an In-SnO2 nanowire thin film with a thickness of 5-6 mu m contains a highly entangled and porous network of nanowires, with a diameter of 100 nm and a nanocrystallite size less than 5 nm. These characteristics of the present In-SnO2 nanowire thin film are highly suitable for typical gas-sensing applications.
"Transmission electron microscopy sample preparation of tin oxide nanowire sensor using focused ion-beam milling technique" (2003). Faculty Bibliography 2000s. 4026.