Modeling of time-dependent dielectric breakdown in copper metallization
Abbreviated Journal Title
IEEE Trans. Device Mater. Reliab.
copper diffusion; copper interconnect; dielectric breakdown; E model; time-dependent dielectric breakdown (TDDB); DIFFUSION-BARRIERS; CU METALLIZATION; SILICON DIOXIDE; FILMS; Engineering, Electrical & Electronic; Physics, Applied
Dielectric breakdown of copper interconnects has been studied. The general continuity equation on Cu+, diffusion and drift is investigated. An analytical model to predict the lifetime of time-dependent dielectric breakdown is developed. The model predictions agree well with the previously published experimental data at different electric fields and temperatures. Under an acceleration stress condition, the lifetime is proportional to electric field exponentially and consistent with the E model.
Ieee Transactions on Device and Materials Reliability
"Modeling of time-dependent dielectric breakdown in copper metallization" (2003). Faculty Bibliography 2000s. 4137.