Effect of gate-oxide breakdown on RF performance
Abbreviated Journal Title
IEEE Trans. Device Mater. Reliab.
circuit reliability; dielectric breakdown; equivalent circuit; low-noise; amplifier (LNA); RF; scattering parameters; DEGRADATION; TRANSISTORS; EXTRACTION; MOSFETS; Engineering, Electrical & Electronic; Physics, Applied
The degradation of S-parameters of 0.16-mum nMOS devices due to gate-oxide breakdown is examined. An equivalent circuit model for MOSFETs after gate-oxide breakdown is proposed. The influence of nMOSFET gate-oxide breakdown on the performance of a low-noise amplifier is studied using the equivalent circuit model. Depending on which device and how many fingers break down, the circuit continues to work, despite that the performance of S-parameters and noise figure degrades significantly.
Ieee Transactions on Device and Materials Reliability
"Effect of gate-oxide breakdown on RF performance" (2003). Faculty Bibliography 2000s. 4140.