Title

Ti : sapphire crystal used in ultrafast lasers and amplifiers

Authors

Authors

J. Dong;P. Z. Deng

Comments

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Abbreviated Journal Title

J. Cryst. Growth

Keywords

doping; single crystal growth; titanium doped sapphire; solid state; lasers; PULSES; Crystallography; Materials Science, Multidisciplinary; Physics, Applied

Abstract

The improvement of peak power of femeto-laser depends on the compression of pulse width. The titanium-doped sapphire crystal is the excellent laser crystal with the shortest pulse width. Its theoretical pulse width limit is 3 fs. At present 50-TW tabletop Ti:sapphire lasers have been commercialized. In this paper, comparison of Ti:sapphire crystals grown by temperature gradient technology (TGT) and heat exchange method (HEM) is presented, and results show that the laser quality of Ti:sapphire crystals grown by TGT is similar to or higher than those grown by HEM. circle divide 10-30mm, high optical homogeneity Ti:sapphire amplifiers were fabricated successfully and 5-40TW high power were obtained. We believe that up to 0 100 Ti:sapphire amplifiers (grown by TGT) can be obtained for ultrahigh power laser systems using all Ti:sapphire crystals. in near future. (C) 2003 Elsevier B.V. All rights reserved.

Journal Title

Journal of Crystal Growth

Volume

261

Issue/Number

4

Publication Date

1-1-2004

Document Type

Article

Language

English

First Page

514

Last Page

519

WOS Identifier

WOS:000188547000013

ISSN

0022-0248

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