Abbreviated Journal Title
J. Appl. Phys.
Keywords
HOT-HOLE LASER; VALENCE-BAND; STIMULATED-EMISSION; MAGNETIC-FIELDS; MODE-LOCKING; GERMANIUM; OPERATION; GAIN; OSCILLATION; TRANSITIONS; Physics, Applied
Abstract
A far-infrared p-type germanium laser with active crystal prepared from ultra pure single-crystal Ge by neutron transmutation doping (NTD) is demonstrated. Calculations show that the high uniformity of Ga acceptor distribution achieved by NTD significantly improves average gain. The stronger ionized impurity scattering due to high compensation in NTD Ge is shown to have insignificant negative impact on the gain at the moderate doping concentrations sufficient for laser operation. Experimentally, this first NTD laser is found to have lower current-density lasing threshold than the best of a number of melt-doped laser crystals studied for comparison.
Journal Title
Journal of Applied Physics
Volume
96
Issue/Number
1
Publication Date
1-1-2004
Document Type
Article
DOI Link
Language
English
First Page
1
Last Page
6
WOS Identifier
ISSN
0021-8979
Recommended Citation
Nelson, E. W.; Dolguikh, M. V.; Muravjov, A. V.; Flitsiyan, E. S.; Du Bosq, T. W.; Peale, R. E.; Kleckley, S. H.; Fredricksen, C. J.; and Vernetson, W. G., "Neutron transmutation doped far-infrared p-Ge laser" (2004). Faculty Bibliography 2000s. 4608.
https://stars.library.ucf.edu/facultybib2000/4608
Comments
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