Title

Neutron transmutation doped far-infrared p-Ge laser

Authors

Authors

E. W. Nelson; M. V. Dolguikh; A. V. Muravjov; E. S. Flitsiyan; T. W. Du Bosq; R. E. Peale; S. H. Kleckley; C. J. Fredricksen;W. G. Vernetson

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

J. Appl. Phys.

Keywords

HOT-HOLE LASER; VALENCE-BAND; STIMULATED-EMISSION; MAGNETIC-FIELDS; MODE-LOCKING; GERMANIUM; OPERATION; GAIN; OSCILLATION; TRANSITIONS; Physics, Applied

Abstract

A far-infrared p-type germanium laser with active crystal prepared from ultra pure single-crystal Ge by neutron transmutation doping (NTD) is demonstrated. Calculations show that the high uniformity of Ga acceptor distribution achieved by NTD significantly improves average gain. The stronger ionized impurity scattering due to high compensation in NTD Ge is shown to have insignificant negative impact on the gain at the moderate doping concentrations sufficient for laser operation. Experimentally, this first NTD laser is found to have lower current-density lasing threshold than the best of a number of melt-doped laser crystals studied for comparison. (C) 2004 American Institute of Physics.

Journal Title

Journal of Applied Physics

Volume

96

Issue/Number

1

Publication Date

1-1-2004

Document Type

Article

Language

English

First Page

1

Last Page

6

WOS Identifier

WOS:000222093300001

ISSN

0021-8979

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