Title

Improved and physics-based model for symmetrical spiral inductors

Authors

Authors

J. Chen;J. J. Liou

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

IEEE Trans. Electron Devices

Keywords

passive device; quality factor; RF circuit; spiral inductor; Engineering, Electrical & Electronic; Physics, Applied

Abstract

Recent growth in RF applications has increased the use of spiral inductors and thus demanded a more accurate model for such devices. In this paper, the authors focus on the model development of spiral inductors with symmetrical terminals, but the same approach can be applied readily to asymmetrical inductors. Relevant and important physics such as the current crowding in metal line, frequency-dependent permittivity in oxide, and overlap parasitics are accounted for. Experimental data and results calculated from the existing inductor models are included in support of the model development.

Journal Title

Ieee Transactions on Electron Devices

Volume

53

Issue/Number

6

Publication Date

1-1-2006

Document Type

Article

Language

English

First Page

1300

Last Page

1309

WOS Identifier

WOS:000238154200003

ISSN

0018-9383

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