Abbreviated Journal Title
J. Vac. Sci. Technol. B
Keywords
EUV SOURCE; X-RAY; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied
Abstract
Extreme ultraviolet lithography requires a high-efficiency light source at 13 nm that is free from debris. Our mass-limited Sn-based laser plasma source shows 1.2% conversion efficiency. Emission spectra from the source were obtained to observe the effects of Sri concentration and effects of laser intensity. Debris measurements were analyzed, and an enhanced repeller field configuration shows marked improvement in mitigating debris. (C) 2004 American Vacuum Society.
Journal Title
Journal of Vacuum Science & Technology B
Volume
22
Issue/Number
2
Publication Date
1-1-2004
Document Type
Article; Proceedings Paper
DOI Link
Language
English
First Page
785
Last Page
790
WOS Identifier
ISSN
1071-1023
Recommended Citation
Richardson, M.; Koay, C. -S.; Takenoshita, K.; Keyser, C.; and Al-Rabban, M., "High conversion efficiency mass-limited Sn-based laser plasma source for extreme ultraviolet lithography" (2004). Faculty Bibliography 2000s. 4740.
https://stars.library.ucf.edu/facultybib2000/4740
Comments
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