Title

Nanocrystalline indium oxide-doped tin oxide thin film as low temperature hydrogen sensor

Authors

Authors

S. Shukla; S. Seal; L. Ludwig;C. Parish

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Sens. Actuator B-Chem.

Keywords

nanocrystalline indium oxide-doped tin oxide; Pt-sputtered thin film; low temperature hydrogen sensor; GAS-SENSING PROPERTIES; ION-ASSISTED DEPOSITION; SOL-GEL PROCESS; PARTICLE-SIZE; H-2 SENSOR; SNO2; PALLADIUM; CO; NANOPARTICLES; SENSITIVITY; Chemistry, Analytical; Electrochemistry; Instruments & Instrumentation

Abstract

Hydrogen gas, within the concentration range of 100 ppm-4 vol.%, is successfully sensed at lower operating temperatures, 25 and 50degreesC, using the Pt-sputtered sol-gel dip-coated nanocrystalline (6-7 nm) 6.5 mol% In2O3-doped SnO2 semiconductor thin (100-150 nm) film sensor. Typically, for 1000 ppm of hydrogen, the maximum sensitivity values of 32 and 1600% are observed at 25 and 50degreesC, respectively; while for 2 vol.% hydrogen, the maximum sensitivity values of 50 and 70,000% are recorded at 25 and 50degreesC, respectively. At 25degreesC, for 4 vol.% (explosive limit as set by NASA) hydrogen, the maximum hydrogen gas sensitivity values of 107,887 and 2083% are observed for the Pt-sputtered thin films calcined at 500 and 600degreesC, respectively. (C) 2003 Elsevier B.V. All rights reserved.

Journal Title

Sensors and Actuators B-Chemical

Volume

97

Issue/Number

2-3

Publication Date

1-1-2004

Document Type

Article

Language

English

First Page

256

Last Page

265

WOS Identifier

WOS:000188700800013

ISSN

0925-4005

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