Title

Impact of temperature-accelerated voltage stress on PMOS RF performance

Authors

Authors

C. Z. Yu; U. Liu;J. S. Yuan

Comments

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Abbreviated Journal Title

IEEE Trans. Device Mater. Reliab.

Keywords

breakdown (BD); hot carriers (HCs); modeling; negative bias temperature; instability (NBTI); radio frequency (RF) circuit simulation; temperature-accelerated stress; GATE-OXIDE BREAKDOWN; HOT-CARRIER; DEGRADATION; MOSFETS; RELIABILITY; AC; Engineering, Electrical & Electronic; Physics, Applied

Abstract

The thermal electrochemical analysis and modeling, of negative bias temperature instability, oxide breakdown, and hot-carrier injection effects on metal-oxide-semiconductor devices are performed.. The temperature-accelerated voltage stress has been examined experimentally. A subcircuit model aiming to evaluate the stress-induced degradation via simulation is developed. The measured and simulated performance for fresh and stressed devices at different temperatures is presented: The. radio frequency performance degradation of a test circuit due to temperature-accelerated voltage stress is investigated.

Journal Title

Ieee Transactions on Device and Materials Reliability

Volume

4

Issue/Number

4

Publication Date

1-1-2004

Document Type

Article

Language

English

First Page

664

Last Page

669

WOS Identifier

WOS:000226617100012

ISSN

1530-4388

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