Title

Surface-modified polymeric pads for enhanced performance during chemical mechanical planarization

Authors

Authors

S. Deshpande; S. Dakshinamurthy; S. C. Kuiry; R. Vaidyanathan; Y. S. Obeng;S. Seal

Comments

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Abbreviated Journal Title

Thin Solid Films

Keywords

polyurethane; ASP; CMP; FTIR; nanoindentation; PECVD; TEOS; XPS; VAPOR-DEPOSITION; TETRAETHOXYSILANE; INDENTATION; FILMS; OXYGEN; LOAD; XPS; Materials Science, Multidisciplinary; Materials Science, Coatings &; Films; Physics, Applied; Physics, Condensed Matter

Abstract

The chemical mechanical planarization (CMP) process occurs at an atomic level at the slurry/wafer interface and hence slurries and polishing pads play a critical role in their successful implementation. Polyurethane is a commonly used polymer in the manufacturing of CMP pads. These pads are incompatible with some chemicals present in the CMP slurries, such as hydrogen peroxide. To overcome these problems, Psiloquest has developed new Application Specific Pads (ASP). Surface of such pads has been modified by depositing a thin film of tetraethyl orthosilicate using plasma-enhanced chemical vapor deposition (PECVD) process. In the present study, mechanical properties of such coated pads have been investigated using nanoindentation. The surface morphology and the chemistry of the ASP were studied using scanning electron microcopy, X-ray photoelectron spectroscopy, and Fourier transform infrared spectroscopy techniques. It was observed that mechanical and chemical properties of the pad top surface are a function of the PECVD coating time. Such PECVD-treated pads are found to be hydrophilic and do not require storage in aqueous media during the not-in-use period. The metal removal rate using such surface-modified polishing pads was found to increase linearly with the PECVD coating time. (c) 2005 Elsevier B.V. All rights reserved.

Journal Title

Thin Solid Films

Volume

483

Issue/Number

1-2

Publication Date

1-1-2005

Document Type

Article

Language

English

First Page

261

Last Page

269

WOS Identifier

WOS:000229681700044

ISSN

0040-6090

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