Terahertz gain on intersubband transitions in multilayer delta-doped p-Ge structures
Abbreviated Journal Title
J. Appl. Phys.
STIMULATED-EMISSION; PHONON SCATTERING; HOT HOLES; GERMANIUM; FIELDS; LASER; SEMICONDUCTORS; ABSORPTION; MOBILITY; Physics, Applied
A far-infrared laser concept based on intersubband transitions of holes in p-type periodically delta-doped semiconductor films is studied using numerical Monte Carlo simulation of hot-hole dynamics. The considered device consists of monocrystalline pure Ge layers periodically interleaved with delta-doped layers and operates with vertical hole transport in the presence of an in-plane magnetic field. Population inversion on intersubband transitions arises due to light-hole accumulation in E perpendicular to B fields, as in the bulk p-Ge laser. However, the considered structure achieves spatial separation of hole accumulation regions from the doped layers, which reduces ionized-impurity and carrier-carrier scattering for the majority of light holes. This allows a remarkable increase of the gain in comparison with bulk p-Ge lasers. Population inversion and gain sufficient for laser operation are expected up to 77 K. Test structures grown by chemical-vapor deposition demonstrate feasibility of producing the device with sufficient active thickness to allow quasioptical electrodynamic cavity solutions. (c) 2005 American Institute of Physics.
Journal of Applied Physics
"Terahertz gain on intersubband transitions in multilayer delta-doped p-Ge structures" (2005). Faculty Bibliography 2000s. 5139.