Title

Terahertz gain on intersubband transitions in multilayer delta-doped p-Ge structures

Authors

Authors

M. V. Dolguikh; A. V. Muravjov; R. E. Peale; M. Klimov; O. A. Kuznetsov;E. A. Uskova

Comments

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Abbreviated Journal Title

J. Appl. Phys.

Keywords

STIMULATED-EMISSION; PHONON SCATTERING; HOT HOLES; GERMANIUM; FIELDS; LASER; SEMICONDUCTORS; ABSORPTION; MOBILITY; Physics, Applied

Abstract

A far-infrared laser concept based on intersubband transitions of holes in p-type periodically delta-doped semiconductor films is studied using numerical Monte Carlo simulation of hot-hole dynamics. The considered device consists of monocrystalline pure Ge layers periodically interleaved with delta-doped layers and operates with vertical hole transport in the presence of an in-plane magnetic field. Population inversion on intersubband transitions arises due to light-hole accumulation in E perpendicular to B fields, as in the bulk p-Ge laser. However, the considered structure achieves spatial separation of hole accumulation regions from the doped layers, which reduces ionized-impurity and carrier-carrier scattering for the majority of light holes. This allows a remarkable increase of the gain in comparison with bulk p-Ge lasers. Population inversion and gain sufficient for laser operation are expected up to 77 K. Test structures grown by chemical-vapor deposition demonstrate feasibility of producing the device with sufficient active thickness to allow quasioptical electrodynamic cavity solutions. (c) 2005 American Institute of Physics.

Journal Title

Journal of Applied Physics

Volume

98

Issue/Number

2

Publication Date

1-1-2005

Document Type

Article

Language

English

First Page

7

WOS Identifier

WOS:000230931500007

ISSN

0021-8979

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