Multilayer silicon cavity mirrors for the far-infrared p-Ge laser
Abbreviated Journal Title
Multilayer mirrors capable of > 99.9% reflectivity in the far infrared (70-200 mu m wavelengths) were constructed using thin silicon etalons separated by empty gaps. Calculations indicate that only three periods are required to produce 99.9% reflectivity because of the large difference between the index of refraction of silicon (3.384) and the vacuum (1). The mirror was assembled from high-purity silicon wafers, with resistivity over 4000 Omega cm to reduce free-carrier absorption. Wafers were double-side polished with faces parallel within 10 are sec. The multilayer mirror was demonstrated as a cavity mirror for the far-infrared p-Ge laser. Dependence of reflectivity on design accuracy was considered. (c) 2005 Optical Society of America.
"Multilayer silicon cavity mirrors for the far-infrared p-Ge laser" (2005). Faculty Bibliography 2000s. 5150.