Wavelength selection for the far-infrared p-Ge laser using etched silicon lamellar gratings
Abbreviated Journal Title
Opt. Laser Technol.
terahertz; germanium; laser; CAVITY; Optics; Physics, Applied
A lamellar mirror made from Si wafer by anisotropic chemical etching and coated with gold has been demonstrated as an intracavity wavelength selector for the far-infrared p-Ge laser. The etching process produces rectangular grooves with precisely predetermined depth and 100 nm surface smoothness. This lamellar-grating structure defines the resonant laser wavelength within the broad tuning range of the p-Ge laser. Single wavelength laser operation with this mirror has been demonstrated on the third-order resonance with ail active cavity finesse of at least 0.09. (C) 2004 Elsevier Ltd. All rights reserved.
Optics and Laser Technology
"Wavelength selection for the far-infrared p-Ge laser using etched silicon lamellar gratings" (2005). Faculty Bibliography 2000s. 5151.