Gate oxide breakdown on nMOSFET cutoff frequency and breakdown resistance
Abbreviated Journal Title
IEEE Trans. Device Mater. Reliab.
breakdown spot resistance; cutoff frequency; gate capacitance; gate; oxide breakdown; LC oscillator; nMOS transistors; oscillation frequency; MOSFET DRAIN CURRENT; SOFT BREAKDOWN; CMOS; PERFORMANCE; VARACTORS; DESIGN; VCOS; NM; Engineering, Electrical & Electronic; Physics, Applied
Gate oxide breakdown effect on CMOS RF devices has been examined. The breakdown spot resistance and total gate capacitance of nMOS transistors decrease with stress. The analytical equation of cutoff frequency including the gate oxide breakdown effect is derived. The impact of oxide breakdown on the performance of an LC oscillator is evaluated. The oscillation frequency of the LC oscillator increases with oxide breakdown.
Ieee Transactions on Device and Materials Reliability
"Gate oxide breakdown on nMOSFET cutoff frequency and breakdown resistance" (2005). Faculty Bibliography 2000s. 5424.