Title

Minority carrier transport in p-type Zn0.9Mg0.1O doped with phosphorus

Authors

Authors

O. Lopatiuk; W. Burdett; L. Chernyak; K. P. Ip; Y. W. Heo; D. P. Norton; S. J. Pearton; B. Hertog; P. P. Chow;A. Osinsky

Comments

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Abbreviated Journal Title

Appl. Phys. Lett.

Keywords

ZNO THIN-FILMS; CHEMICAL-VAPOR-DEPOSITION; PULSED-LASER DEPOSITION; LIGHT-EMITTING-DIODES; NITROGEN ACCEPTORS; DIFFUSION LENGTH; GAN; EPITAXY; GROWTH; Physics, Applied

Abstract

Minority carrier diffusion length and lifetime in p-Zn0.9Mg0.1O doped with phosphorus were obtained from local electron beam irradiation measurements. The irradiation resulted in an increase of up to 25% in minority electron diffusion length from the initial value of similar to2.12 mum and in a simultaneous decrease of the peak near-bandedge cathodoluminescence intensity. The observed phenomena are attributed to charging of phosphorus-related deep acceptor level(s), which is consistent with the activation energy of 256+/-20 meV found for the effect of electron injection in Zn0.9Mg0.1O. (C) 2005 American Institute of Physics.

Journal Title

Applied Physics Letters

Volume

86

Issue/Number

1

Publication Date

1-1-2005

Document Type

Article

Language

English

First Page

3

WOS Identifier

WOS:000226701200049

ISSN

0003-6951

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