Abbreviated Journal Title
Appl. Phys. Lett.
Keywords
ZNO THIN-FILMS; CHEMICAL-VAPOR-DEPOSITION; PULSED-LASER DEPOSITION; LIGHT-EMITTING-DIODES; NITROGEN ACCEPTORS; DIFFUSION LENGTH; GAN; EPITAXY; GROWTH; Physics, Applied
Abstract
Minority carrier diffusion length and lifetime in p-Zn0.9Mg0.1O doped with phosphorus were obtained from local electron beam irradiation measurements. The irradiation resulted in an increase of up to 25% in minority electron diffusion length from the initial value of similar to2.12 mum and in a simultaneous decrease of the peak near-bandedge cathodoluminescence intensity. The observed phenomena are attributed to charging of phosphorus-related deep acceptor level(s), which is consistent with the activation energy of 256+/-20 meV found for the effect of electron injection in Zn0.9Mg0.1O.
Journal Title
Applied Physics Letters
Volume
86
Issue/Number
1
Publication Date
1-1-2005
Document Type
Article
DOI Link
Language
English
First Page
3
WOS Identifier
ISSN
0003-6951
Recommended Citation
Lopatiuk, O.; Burdett, W.; Chernyak, L.; Ip, K. P.; Heo, Y. W.; Norton, D. P.; Pearton, S. J.; Hertog, B.; Chow, P. P.; and Osinsky, A., "Minority carrier transport in p-type Zn0.9Mg0.1O doped with phosphorus" (2005). Faculty Bibliography 2000s. 5428.
https://stars.library.ucf.edu/facultybib2000/5428
Comments
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