Minority carrier transport in p-type Zn0.9Mg0.1O doped with phosphorus
Abbreviated Journal Title
Appl. Phys. Lett.
ZNO THIN-FILMS; CHEMICAL-VAPOR-DEPOSITION; PULSED-LASER DEPOSITION; LIGHT-EMITTING-DIODES; NITROGEN ACCEPTORS; DIFFUSION LENGTH; GAN; EPITAXY; GROWTH; Physics, Applied
Minority carrier diffusion length and lifetime in p-Zn0.9Mg0.1O doped with phosphorus were obtained from local electron beam irradiation measurements. The irradiation resulted in an increase of up to 25% in minority electron diffusion length from the initial value of similar to2.12 mum and in a simultaneous decrease of the peak near-bandedge cathodoluminescence intensity. The observed phenomena are attributed to charging of phosphorus-related deep acceptor level(s), which is consistent with the activation energy of 256+/-20 meV found for the effect of electron injection in Zn0.9Mg0.1O. (C) 2005 American Institute of Physics.
Applied Physics Letters
"Minority carrier transport in p-type Zn0.9Mg0.1O doped with phosphorus" (2005). Faculty Bibliography 2000s. 5428.