Title

Lithium-related states as deep electron traps in ZnO

Authors

Authors

O. Lopatiuk; L. Chernyak; A. Osinsky;J. Q. Xie

Comments

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Abbreviated Journal Title

Appl. Phys. Lett.

Keywords

LIGHT-EMITTING-DIODES; SINGLE-CRYSTAL; ZINC-OXIDE; GAN; FILMS; Physics, Applied

Abstract

Carrier trapping in Li-doped ZnO was studied using Electron Beam Induced Current technique, as well as cathodoluminescence spectroscopy and persistent photoconductivity measurements. Under electron beam excitation, the minority carrier diffusion length underwent a significant increase, which was correlated with growing carrier lifetime, as demonstrated by the irradiation-induced decay of CL intensity of the near-band-edge transition. Variable-temperature cathodoluminescence and photoconductivity experiments showed evidence of carrier trapping and yielded activation energies of 280 and 245 meV, respectively. These observations are attributed to the presence of a deep, Li-related acceptor state. (c) 2005 American Institute of Physics.

Journal Title

Applied Physics Letters

Volume

87

Issue/Number

21

Publication Date

1-1-2005

Document Type

Article

Language

English

First Page

3

WOS Identifier

WOS:000233362300101

ISSN

0003-6951

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