Lithium-related states as deep electron traps in ZnO
Abbreviated Journal Title
Appl. Phys. Lett.
LIGHT-EMITTING-DIODES; SINGLE-CRYSTAL; ZINC-OXIDE; GAN; FILMS; Physics, Applied
Carrier trapping in Li-doped ZnO was studied using Electron Beam Induced Current technique, as well as cathodoluminescence spectroscopy and persistent photoconductivity measurements. Under electron beam excitation, the minority carrier diffusion length underwent a significant increase, which was correlated with growing carrier lifetime, as demonstrated by the irradiation-induced decay of CL intensity of the near-band-edge transition. Variable-temperature cathodoluminescence and photoconductivity experiments showed evidence of carrier trapping and yielded activation energies of 280 and 245 meV, respectively. These observations are attributed to the presence of a deep, Li-related acceptor state. (c) 2005 American Institute of Physics.
Applied Physics Letters
"Lithium-related states as deep electron traps in ZnO" (2005). Faculty Bibliography 2000s. 5429.