Electron trapping effects in C- and Fe-doped GaN and AlGaN
Abbreviated Journal Title
III-nitrides; cathodoluminescence; EBIC; lifetime; diffusion length; P-TYPE GAN; MINORITY-CARRIER TRANSPORT; ACCEPTOR BINDING-ENERGIES; GALLIUM NITRIDE; PHOTOLUMINESCENCE SPECTROSCOPY; PERSISTENT; PHOTOCONDUCTIVITY; OPTICAL METASTABILITY; DIFFUSION LENGTH; BUFFER; LAYERS; CARBON; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter
Iron- and carbon-doped GaN and iron-doped Al0.2Ga0.8N irradiated by low energy electron beam of scanning electron microscope were studied by cathodoluminescence and electron beam-induced current techniques. Irradiation is shown to induce a systematic decay of the cathodoluminescence intensity, which is accompanied by increased electronic carrier diffusion length, indicating the increase of carrier lifetime. Temperature-dependent cathodoluminescence measurements yielded activation energies for irradiation-induced effects of 210, 230, and 360 meV for GaN:Q GaN:Fe, and Al0.2Ga0.8N:Fe, respectively. These observations are consistent with trapping of non-equilibrium electrons on deep, non-ionized acceptor levels. (c) 2005 Elsevier Ltd. All rights reserved.
"Electron trapping effects in C- and Fe-doped GaN and AlGaN" (2005). Faculty Bibliography 2000s. 5431.