Title

Interfacial thermal conductivity: Insights from atomic level simulation

Authors

Authors

S. R. Phillpot; P. K. Schelling;P. K. Keblinski

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

J. Mater. Sci.

Keywords

MOLECULAR-DYNAMICS SIMULATION; GRAIN-BOUNDARIES; RESISTANCE; TRANSPORT; Materials Science, Multidisciplinary

Abstract

We analyze the results of molecular-dynamics simulations of the interfacial (Kapitza) resistance of representative grain boundaries in Si. Simulations of the interactions of phonon wave packets with the Si grain boundaries show that the scattering process depends strongly on both the branch and wavelength of the incident phonons. This approach has the potential for providing detailed spectral information to mesoscale simulations of thermal transport in interfacial systems. (c) 2005 Springer Science + Business Media, Inc.

Journal Title

Journal of Materials Science

Volume

40

Issue/Number

12

Publication Date

1-1-2005

Document Type

Article; Proceedings Paper

DOI Link

http://dx.doi.org/10.1007/s10853-005-2676-2

Language

English

First Page

3143

Last Page

3148

WOS Identifier

WOS:000229972700015

ISSN

0022-2461

Recommended Citation

"Interfacial thermal conductivity: Insights from atomic level simulation" (2005). Faculty Bibliography 2000s. 5548.
https://stars.library.ucf.edu/facultybib2000/5548