Title

6-H single-crystal silicon carbide thermo-optic coefficient measurements for ultrahigh temperatures up to 1273 K in the telecommunications infrared band

Authors

Authors

N. A. Riza; M. Arain;F. Perez

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

J. Appl. Phys.

Keywords

REFRACTIVE-INDEX; DEPENDENCE; INTERFEROMETER; WAVELENGTH; INP; Physics, Applied

Abstract

6H single-crystal silicon carbide (SiC) is an excellent optical material for extremely high temperature applications. Furthermore, the telecommunication infrared band (e.g., 1500-1600 nm) is an eye safe and high commercial maturity optical technology. With this motivation, the thermo-optic coefficient partial derivative n/partial derivative T for 6H single-crystal SiC is experimentally measured and analyzed from near room temperature to a high temperature of 1273 K with data taken at the 1550 nm wavelength. Specifically, the natural etalon behavior of 6-H single-crystal SiC is exploited within a simple polarization-insensitive hybrid fiber-free-space optical interferometric system to take accurate and rapid optical power measurements leading to partial derivative n/partial derivative T data. The reported results are in agreement with the previously reported research at the lower < 600 K temperatures. (c) 2005 American Institute of Physics.

Journal Title

Journal of Applied Physics

Volume

98

Issue/Number

10

Publication Date

1-1-2005

Document Type

Article

Language

English

First Page

5

WOS Identifier

WOS:000233602600022

ISSN

0021-8979

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