SiC super junction power devices: Modeling and analysis
power devices; super-junction; SiC; wide-band gap semiconductors; Materials Science, Multidisciplinary; Materials Science, ; Characterization & Testing
In this paper, we extend the super junction concept to SiC high voltage devices and further expand the SiC theoretical limit. It is shown that the super-junction concept can reduce the theoretical specific on-resistance by several times to several orders of magnitude for both silicon and SiC. The unique merit of SiC super-junction devices is that the required P and N pillars have a much smaller aspect ratio and may be easier to form than their silicon counterparts. Furthermore, SiC super-junction devices are much less sensitive to charge imbalance issue than silicon SJ devices.
Silicon Carbide and Related Materials 2004
"SiC super junction power devices: Modeling and analysis" (2005). Faculty Bibliography 2000s. 5659.