Authors

S. Shukla; R. Agrawal; H. J. Cho; S. Seal; L. Ludwig;C. Parish

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Abbreviated Journal Title

J. Appl. Phys.

Keywords

SEMICONDUCTOR GAS SENSORS; SENSING PROPERTIES; INDIUM OXIDE; THIN-FILMS; ACTIVATION; Physics, Applied

Abstract

The effect of ultraviolet (UV) radiation exposure on the room-temperature hydrogen (H-2) sensitivity of nanocrystalline indium oxide (In2O3)-doped tin oxide (SnO2) thin-film gas sensor is investigated in this article. The present sensor is incorporated into microelectromechanical systems device using sol-gel dip-coating technique. The present sensor exhibits a very high sensitivity, as high as 65 000-110 000, at room temperature, for 900 ppm of H-2 under the dynamic test condition without UV exposure. The H-2 sensitivity is, however, observed to reduce to 200 under UV radiation, which is contrary to the literature data, where an enhanced room-temperature gas sensitivity has been reported under UV radiation. The observed phenomenon is attributed to the reduced surface coverage by the chemisorbed oxygen ions under UV radiation, which is in consonance with the prediction of the constitutive equation, proposed recently by the authors, for the gas sensitivity of nanocrystalline semiconductor oxide thin-film sensors.

Journal Title

Journal of Applied Physics

Volume

97

Issue/Number

5

Publication Date

1-1-2005

Document Type

Article

Language

English

First Page

13

WOS Identifier

WOS:000227766900054

ISSN

0021-8979

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