Voltage stress-induced hot carrier effects on SiGe HBT VCO
Abbreviated Journal Title
BIPOLAR-TRANSISTORS; DEGRADATION; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied
This paper presents the hot carrier (HC) induced performance degradation in a 10 GHz voltage controlled oscillator (VCO) with SiGe heterojunction bipolar transistors (HBTs). SiGe device characteristics due to HC stress are examined experimentally. The vertical bipolar inter-company (VBIC) model parameters extracted from measured data are used in Cadence SpectreRF simulation to verify the HC effect on the VCO. The VCO shows significant vulnerability to hot carriers. (c) 2005 Elsevier Ltd. All rights reserved.
Article; Proceedings Paper
"Voltage stress-induced hot carrier effects on SiGe HBT VCO" (2005). Faculty Bibliography 2000s. 5817.