Title

Dynamic stress-induced high-frequency noise degradations in nMOSFETs

Authors

Authors

C. Z. Yu; J. S. Yuan;A. Sadat

Comments

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Abbreviated Journal Title

Microelectron. Reliab.

Keywords

Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

Abstract

Device parameter shifts in nMOSFETs subject to inverter-like dynamic voltage stress are examined experimentally. Model equations to relate high-frequency noise to device parameters are given. Dynamic stress-induced degradations in high-frequency noise performance of 0.16 mu m nMOSFETs are investigated. Good agreement between the analytical predictions and experimental data is obtained. Noise performance of a Gilbert mixer is evaluated using Cadence SpectreRF simulation with the measured device model parameters. (c) 2005 Elsevier Ltd. All rights reserved.

Journal Title

Microelectronics Reliability

Volume

45

Issue/Number

9-11

Publication Date

1-1-2005

Document Type

Article; Proceedings Paper

Language

English

First Page

1794

Last Page

1799

WOS Identifier

WOS:000232253500097

ISSN

0026-2714

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