Dynamic stress-induced high-frequency noise degradations in nMOSFETs
Abbreviated Journal Title
Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied
Device parameter shifts in nMOSFETs subject to inverter-like dynamic voltage stress are examined experimentally. Model equations to relate high-frequency noise to device parameters are given. Dynamic stress-induced degradations in high-frequency noise performance of 0.16 mu m nMOSFETs are investigated. Good agreement between the analytical predictions and experimental data is obtained. Noise performance of a Gilbert mixer is evaluated using Cadence SpectreRF simulation with the measured device model parameters. (c) 2005 Elsevier Ltd. All rights reserved.
Article; Proceedings Paper
"Dynamic stress-induced high-frequency noise degradations in nMOSFETs" (2005). Faculty Bibliography 2000s. 5819.