Authors

L. G. Zhang; H. Jin; W. Y. Yang; Z. P. Xie; H. H. Miao;L. N. An

Comments

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"This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in the linked citation and may be found originally at Applied Physics Letters."

Abbreviated Journal Title

Appl. Phys. Lett.

Keywords

HYDROGENATED SILICON-NITRIDE; DANGLING-BOND CENTERS; THIN-FILMS; ELECTRONIC-STRUCTURE; 1ST OBSERVATION; H-ALLOYS; A-SINX; PHOTOLUMINESCENCE; NANOWIRES; SPECTRA; Physics, Applied

Abstract

The optical properties of single-crystalline alpha-Si3N4 nanobelts synthesized via catalyst-assisted pyrolysis of polymeric precursor were characterized by absorption, photolurninescence (PL) and photoluminescence excitation (PLE). The optical absorption spectrum showed that the nanobelts exhibited indirect absorption behavior with optical band gap of similar to5.0 eV. Three broad peaks centered at 1.8, 2.3, and 3.0 eV were observed from the room-temperature PL spectrum of the nanobelts. The PLE spectra suggested the existence of multifold energy levels within the gap. A qualitative model was proposed to explain the observed absorption, PL and PLE spectra.

Journal Title

Applied Physics Letters

Volume

86

Issue/Number

6

Publication Date

1-1-2005

Document Type

Article

Language

English

First Page

3

WOS Identifier

WOS:000227355200024

ISSN

0003-6951

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