Title

Preparation and characterization of transparent conducting ZnTe : Cu back contact interface layer for CdS/CdTe solar cell for photoelectrochemical application

Authors

Authors

U. S. Avachat;N. G. Dhere

Comments

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Abbreviated Journal Title

J. Vac. Sci. Technol. A

Keywords

DOPED ZNTE; THIN-FILMS; MORPHOLOGY; Materials Science, Coatings & Films; Physics, Applied

Abstract

FSEC Photovoltaic Materials Laboratory has developed a photoelectrochemical (PEC) cell using multiple band gap tandem of thin-film photovoltaic (PV) cells and a photocatalyst for hydrogen production by water splitting. CdS/CdTe solar cell, a promising candidate for low-cost, thin-film PV cell, is used as one of the thin-film solar cells in a PEC cell. The back contact has been developed for a CdS/CdTe solar cell which involves the deposition of a primary p-type ZnTe:Cu back contact interface layer followed by the deposition of transparent and conducting ZnO:AI and Ni-Al outer metallization layer. This article presents preparation and characterization of ZnTe:Cu back contact interface layer deposited by hot wall vacuum evaporation (HWVE) technique. HWVE technique has produced highly stoichiometric ZnTe:Cu thin films with cubic phase having {111} texture orientation and produced better transparency in the near infrared region on a glass substrate. (c) 2006 American Vacuum Society.

Journal Title

Journal of Vacuum Science & Technology A

Volume

24

Issue/Number

4

Publication Date

1-1-2006

Document Type

Article; Proceedings Paper

Language

English

First Page

1664

Last Page

1667

WOS Identifier

WOS:000239048100142

ISSN

0734-2101

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