Title

Interfacial phonon scattering in semiconductor nanowires by molecular-dynamics simulation

Authors

Authors

B. Becker; P. K. Schelling;S. R. Phillpot

Comments

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Abbreviated Journal Title

J. Appl. Phys.

Keywords

THERMAL-CONDUCTIVITY; SILICON NANOWIRES; SUPERLATTICE NANOWIRES; TRANSPORT; SURFACES; SI(001); Physics, Applied

Abstract

We use molecular-dynamics simulations of vibrational wave packets to study the scattering of longitudinal-acoustic modes from interfaces in semiconductor nanowires of varying diameters. The energy transmission coefficient at the interface is found to depend strongly on both the nanowire diameter and the frequency of the incident wave. By analyzing the scattering events, we determine the selection rules for nanowire scattering that can be understood in terms of the representations of the point-group symmetry of the nanowire. Using such symmetry arguments, we predict that the presence of gaps in the phonon spectrum of thin high-symmetry nanowires will result in a complete reflection of phonons at the interfaces. We discuss the implications of our results for interfacial scattering in real systems, including Si/Ge superlattice nanowires. (c) 2006 American Institute of Physics.

Journal Title

Journal of Applied Physics

Volume

99

Issue/Number

12

Publication Date

1-1-2006

Document Type

Article

Language

English

First Page

9

WOS Identifier

WOS:000238730000059

ISSN

0021-8979

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