Laser forming of silicon films using nanoparticle precursor
Abbreviated Journal Title
J. Electron. Mater.
silicon nanoparticles; laser crystallization; SEM; differential scanning; calorimetry (DSC); Raman spectroscopy; laser doping; Schottky diode; THIN-FILMS; AMORPHOUS-SILICON; INDUCED CRYSTALLIZATION; MOLECULAR-DYNAMICS; SURFACE-AREA; NICKEL; TEMPERATURE; COALESCENCE; PARTICLE; Engineering, Electrical & Electronic; Materials Science, ; Multidisciplinary; Physics, Applied
Polycrystalline silicon films containing cubic silicon crystallites of size 3-4 mu m have been formed on nickel substrates by fusing and sintering silicon nanoparticle precursors using a laser. A mechanism for the fusion and sintering of these nanoparticles, resulting in reduced heat input and continuous film formation by surface and grain boundary diffusion, is discussed. Films were characterized by optical microscopy, scanning electron microscopy, energy-dispersive spectroscopy, and Raman spectroscopy. Films were doped with n- as well as p-type dopants by using a laser doping technique and their current-voltage (I-V) characteristics were measured.
Journal of Electronic Materials
"Laser forming of silicon films using nanoparticle precursor" (2006). Faculty Bibliography 2000s. 5954.