Title

Present status and future prospects of CIGSS thin film solar cells

Authors

Authors

N. G. Dhere

Comments

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Abbreviated Journal Title

Sol. Energy Mater. Sol. Cells

Keywords

CIGSS solar cells; technologies; efficiency; CU(IN, GA)SE-2; POLYCRYSTALLINE; PERFORMANCE; TEXTURE; DEVICE; Energy & Fuels; Materials Science, Multidisciplinary; Physics, Applied

Abstract

Efficiencies of CuIn1-xGaxSe2-ySy (CIGSS) modules are comparable to those of lower end crystalline-Si modules. CIGSS layers are prepared by reactive co-evaporation, selenization/sulfurization of metallic or compound precursors, reactive co-sputtering and non-vacuum techniques. CuIn1-xGaxS2 (CIGS2) layers are prepared by sulfurization of Cu-rich metallic precursors and etching of excess Cu2-xS. Usually heterojunction partner CdS and transparent-conducting bilayer ZnO/ZnO:Al layers are deposited by chemical bath deposition (CBD) or RF magnetron sputtering. CIGSS solar cell efficiencies have been improved by optimizing Cu, Ga and S proportions and providing a minute amount of Na. This paper reviews preparation and efficiency improvement techniques for CIGSS solar cells. (c) 2006 Elsevier B.V. All rights reserved.

Journal Title

Solar Energy Materials and Solar Cells

Volume

90

Issue/Number

15

Publication Date

1-1-2006

Document Type

Article; Proceedings Paper

Language

English

First Page

2181

Last Page

2190

WOS Identifier

WOS:000239054000003

ISSN

0927-0248

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