An improved junction capacitance model for junction field-effect transistors
Abbreviated Journal Title
compact modeling; junction capacitance; junction field-effect transistor; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter
A new junction capacitance model for the four-terminal junction field-effect transistor (JFET) is presented. With a single expression, the model, which is valid for different temperatures and a wide range of bias conditions, describes correctly the JFET junction capacitance behavior and capacitance drop-off phenomenon. The model has been verified using experimental data measured at Texas Instruments. (c) 2006 Elsevier Ltd. All rights reserved.
"An improved junction capacitance model for junction field-effect transistors" (2006). Faculty Bibliography 2000s. 6082.