Title

Inter-valence-band hole-hole scattering in cubic semiconductors

Authors

Authors

M. V. Dolguikh; A. V. Muravjov;R. E. Peale

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Phys. Rev. B

Keywords

FAR-INFRARED-EMISSION; QUANTUM-WELLS; MONTE-CARLO; Physics, Condensed Matter

Abstract

Transitions between valence subbands resulting from hole-hole scattering in cubic semiconductors have been analyzed in the frame of Coulomb interaction of valence electrons in the Luttinger-Kohn representation. Expressions for transition rates are derived. Calculated rates for transitions between light- and heavy-hole bands are presented for germanium. Hole-hole scattering has remarkably different transition probabilities and scattering-angle dependence than for scattering of holes on ionized impurities. These results are particularly important for hole lifetimes and relative subband populations in unipolar p-type devices, such as the hot hole p-Ge laser. Features of hole-hole scattering for spin polarized hole distributions are also discussed.

Journal Title

Physical Review B

Volume

73

Issue/Number

7

Publication Date

1-1-2006

Document Type

Article

DOI Link

http://dx.doi.org/10.1103/PhysRevB.73.075327

Language

English

First Page

7

WOS Identifier

WOS:000235668900087

ISSN

1098-0121

Recommended Citation

"Inter-valence-band hole-hole scattering in cubic semiconductors" (2006). Faculty Bibliography 2000s. 6087.
https://stars.library.ucf.edu/facultybib2000/6087