Title

An analytical drain current model of short-channel MOSFETs including source/drain resistance effect

Authors

Authors

C. S. Ho; J. J. Liou; H. L. Lo; Y. H. Chang; C. Chang;K. Yu

Comments

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Abbreviated Journal Title

Int. J. Electron.

Keywords

drain current; source/drain parasitic resistance; reverse short channel; effect (RSCE); velocity saturation; channel length modulation (CLM); drain-induced barier lowering (DIBL); THRESHOLD VOLTAGE; MOS DEVICES; SILICON; VLSI; Engineering, Electrical & Electronic

Abstract

In this paper, the DC characteristics of MOSFETs are investigated by means of an analytical approach with considerations of the source/drain parasitic resistance (R-S/R-D). Experimental data of MOS devices for DRAM design and results of TCAD simulation are used to verify the accuracy of theoretical calculation. It is found that both the R-S and R-D can induce a large reduction in the drain current in the linear region, but only the source resistance can cause a large reduction in the drain current in the saturation region. Moreover, the drain current deduction due to the R-S/R-D increases with decreasing channel length and oxide thickness.

Journal Title

International Journal of Electronics

Volume

93

Issue/Number

3

Publication Date

1-1-2006

Document Type

Article

Language

English

First Page

137

Last Page

148

WOS Identifier

WOS:000236650700001

ISSN

0020-7217

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