An analytical drain current model of short-channel MOSFETs including source/drain resistance effect
Abbreviated Journal Title
Int. J. Electron.
drain current; source/drain parasitic resistance; reverse short channel; effect (RSCE); velocity saturation; channel length modulation (CLM); drain-induced barier lowering (DIBL); THRESHOLD VOLTAGE; MOS DEVICES; SILICON; VLSI; Engineering, Electrical & Electronic
In this paper, the DC characteristics of MOSFETs are investigated by means of an analytical approach with considerations of the source/drain parasitic resistance (R-S/R-D). Experimental data of MOS devices for DRAM design and results of TCAD simulation are used to verify the accuracy of theoretical calculation. It is found that both the R-S and R-D can induce a large reduction in the drain current in the linear region, but only the source resistance can cause a large reduction in the drain current in the saturation region. Moreover, the drain current deduction due to the R-S/R-D increases with decreasing channel length and oxide thickness.
International Journal of Electronics
"An analytical drain current model of short-channel MOSFETs including source/drain resistance effect" (2006). Faculty Bibliography 2000s. 6224.