Title

InGaP/GaAs heterojunction bipolar transistor and RF power amplifier reliability

Authors

Authors

X. Liu; J. S. Yuan;J. J. Liou

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Microelectron. Reliab.

Keywords

BASE; CURRENTS; STRESS; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

Abstract

Electrothermal stress on advanced InGaP/GaAs heterojunction bipolar transistors (HBTs) was carried out experimentally. It showed a long-term stress-induced base current instability and a decrease in the DC current gain. A class-AB RF power amplifier (PA) was also considered to study the stress effect on the amplifier's RF performance. The SPICE Gummel-Poon (SGP) model parameters were extracted from the pre- and post-stress HBT data and used in Cadence SpectreRF simulation. The amplifier's post-stress RF characteristics, such as the Output Power and power-added efficiency (PAE), remained almost unchanged even though the post-stress HBT's DC current gain had dropped to 73.6% of its initial value. (c) 2008 Elsevier Ltd. All rights reserved.

Journal Title

Microelectronics Reliability

Volume

48

Issue/Number

8-9

Publication Date

1-1-2008

Document Type

Article; Proceedings Paper

Language

English

First Page

1212

Last Page

1215

WOS Identifier

WOS:000260347000021

ISSN

0026-2714

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