InGaP/GaAs heterojunction bipolar transistor and RF power amplifier reliability
Abbreviated Journal Title
BASE; CURRENTS; STRESS; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied
Electrothermal stress on advanced InGaP/GaAs heterojunction bipolar transistors (HBTs) was carried out experimentally. It showed a long-term stress-induced base current instability and a decrease in the DC current gain. A class-AB RF power amplifier (PA) was also considered to study the stress effect on the amplifier's RF performance. The SPICE Gummel-Poon (SGP) model parameters were extracted from the pre- and post-stress HBT data and used in Cadence SpectreRF simulation. The amplifier's post-stress RF characteristics, such as the Output Power and power-added efficiency (PAE), remained almost unchanged even though the post-stress HBT's DC current gain had dropped to 73.6% of its initial value. (c) 2008 Elsevier Ltd. All rights reserved.
Article; Proceedings Paper
"InGaP/GaAs heterojunction bipolar transistor and RF power amplifier reliability" (2008). Faculty Bibliography 2000s. 637.