Abbreviated Journal Title
Appl. Phys. Lett.
Keywords
P-TYPE ZNO; FILMS; Physics, Applied
Abstract
Forward bias electron injection into the p side of a p-n homojunction was shown to result in an improved response of the ZnO photodiodes. Injection of about 25 C of charge yielded a nearly 2.5-fold increase of photocurrent at 350 nm. This improvement was correlated with the increase of the diffusion length of minority electrons in p-type ZnO:Sb as determined by electron beam induced current measurements. It is suggested that the increase of the diffusion length is related to the carrier trapping on nonionized acceptor levels.
Journal Title
Applied Physics Letters
Volume
89
Issue/Number
14
Publication Date
1-1-2006
Document Type
Article
DOI Link
Language
English
First Page
3
WOS Identifier
ISSN
0003-6951
Recommended Citation
Lopatiuk-Tirpak, O.; Chernyak, L.; Mandalapu, L. J.; Yang, Z.; Liu, J. L.; Gartsman, Konstantin; Feldman, Yishay; and Dashevsky, Zinovy, "Influence of electron injection on the photoresponse of ZnO homojunction diodes" (2006). Faculty Bibliography 2000s. 6375.
https://stars.library.ucf.edu/facultybib2000/6375
Comments
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