Carrier concentration dependence of acceptor activation energy in p-type ZnO
Abbreviated Journal Title
Appl. Phys. Lett.
MOLECULAR-BEAM EPITAXY; MG-DOPED GAN; THIN-FILMS; PHOTOLUMINESCENCE; PHOSPHORUS; DEPOSITION; Physics, Applied
The characteristics of an acceptor level in Sb-doped, p-type ZnO were studied using cathodoluminescence (CL) spectroscopy as a function of hole concentration. Variable-temperature CL measurements allowed us to estimate the activation energy of an Sb-related acceptor from temperature-induced decay of CL intensity. The values of activation energy of about 212 +/- 28, 175 +/- 20, 158 +/- 22, and 135 +/- 15 meV were obtained for samples with carrier concentrations of 1.3x10(17), 6.0x10(17), 8.2x10(17), and 1.3x10(18) cm(-3), respectively. The involvement of acceptor levels is supported by the temperature-dependent hole concentration measurements. The possible origins of the strong temperature dependence are discussed. (c) 2006 American Institute of Physics.
Applied Physics Letters
"Carrier concentration dependence of acceptor activation energy in p-type ZnO" (2006). Faculty Bibliography 2000s. 6377.