Title

Carrier concentration dependence of acceptor activation energy in p-type ZnO

Authors

Authors

O. Lopatiuk-Tirpak; W. V. Schoenfeld; L. Chernyak; F. X. Xiu; J. L. Liu; S. Jang; F. Ren; S. J. Pearton; A. Osinsky;P. Chow

Comments

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Abbreviated Journal Title

Appl. Phys. Lett.

Keywords

MOLECULAR-BEAM EPITAXY; MG-DOPED GAN; THIN-FILMS; PHOTOLUMINESCENCE; PHOSPHORUS; DEPOSITION; Physics, Applied

Abstract

The characteristics of an acceptor level in Sb-doped, p-type ZnO were studied using cathodoluminescence (CL) spectroscopy as a function of hole concentration. Variable-temperature CL measurements allowed us to estimate the activation energy of an Sb-related acceptor from temperature-induced decay of CL intensity. The values of activation energy of about 212 +/- 28, 175 +/- 20, 158 +/- 22, and 135 +/- 15 meV were obtained for samples with carrier concentrations of 1.3x10(17), 6.0x10(17), 8.2x10(17), and 1.3x10(18) cm(-3), respectively. The involvement of acceptor levels is supported by the temperature-dependent hole concentration measurements. The possible origins of the strong temperature dependence are discussed. (c) 2006 American Institute of Physics.

Journal Title

Applied Physics Letters

Volume

88

Issue/Number

20

Publication Date

1-1-2006

Document Type

Article

Language

English

First Page

3

WOS Identifier

WOS:000237682100049

ISSN

0003-6951

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