Title

Novel silicon-controlled rectifier (SCR) for high-voltage electrostatic discharge (ESD) applications

Authors

Authors

Z. W. Liu; J. J. Liou;J. Vinson

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

IEEE Electron Device Lett.

Keywords

electrostatic discharge (ESD); holding voltage; latchup immunity; transmission line pulsing (TLP); Engineering, Electrical & Electronic

Abstract

Electrostatic discharge (ESD) protection, for high-voltage integrated circuits is challenging due to the requirement of high holding voltage to minimize the risk of ESD-induced latchup and electrical overstress. In this letter, a new silicon-controlled rectifier (SCR) is developed for this particular application. The SCR is designed based on the concept that the holding voltage can be increased by reducing the emitter injection efficiency in the SCR. This is accomplished by using a segmented emitter topology. Experimental data show that the new SCR can possess a holding voltage that is larger than 40 V and a failure current I(t2) that is higher than 28 mA/mu m.

Journal Title

Ieee Electron Device Letters

Volume

29

Issue/Number

7

Publication Date

1-1-2008

Document Type

Article

Language

English

First Page

753

Last Page

755

WOS Identifier

WOS:000257626000031

ISSN

0741-3106

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