Title

An improved bidirectional SCR structure for low-triggering ESD protection applications

Authors

Authors

Z. W. Liu; J. Vinson; L. F. Lou;J. J. Liou

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

IEEE Electron Device Lett.

Keywords

bidirectional electrostatic discharge (ESD) protection; holding voltage; latch-up immunity; triggering voltage; Engineering, Electrical & Electronic

Abstract

An improved dual-polarity silicon-controlled rectifier (SCR) device has been proposed and realized in a 0.6-mu m bipolar complementary metal-oxide-semiconductor process. The device can be used to protect electrostatic discharge (ESD) in both the positive and negative directions on pins with a voltage range that goes below ground. Comparing with the conventional bidirectional SCR structures, the new device is more suitable for low-voltage integrated circuit ESD protection applications because it possesses a smaller trigger voltage, a smaller leakage current, and a larger holding voltage.

Journal Title

Ieee Electron Device Letters

Volume

29

Issue/Number

4

Publication Date

1-1-2008

Document Type

Article

Language

English

First Page

360

Last Page

362

WOS Identifier

WOS:000254225800025

ISSN

0741-3106

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