An improved bidirectional SCR structure for low-triggering ESD protection applications
Abbreviated Journal Title
IEEE Electron Device Lett.
bidirectional electrostatic discharge (ESD) protection; holding voltage; latch-up immunity; triggering voltage; Engineering, Electrical & Electronic
An improved dual-polarity silicon-controlled rectifier (SCR) device has been proposed and realized in a 0.6-mu m bipolar complementary metal-oxide-semiconductor process. The device can be used to protect electrostatic discharge (ESD) in both the positive and negative directions on pins with a voltage range that goes below ground. Comparing with the conventional bidirectional SCR structures, the new device is more suitable for low-voltage integrated circuit ESD protection applications because it possesses a smaller trigger voltage, a smaller leakage current, and a larger holding voltage.
Ieee Electron Device Letters
"An improved bidirectional SCR structure for low-triggering ESD protection applications" (2008). Faculty Bibliography 2000s. 639.