Diffusion behavior of implanted Li ions in GaN thin films studied by secondary ion mass spectrometry
Abbreviated Journal Title
Mater. Sci. Semicond. Process
GaN; diffusion; SIMS; NITRIDE; SILICON; GROWTH; DIODES; GAAS; Engineering, Electrical & Electronic; Materials Science, ; Multidisciplinary; Physics, Applied; Physics, Condensed Matter
Lithium ions with dosages of 2.6 x 10(12), 2.6 x 10(13), 2.6 x 10(14), and 2.6 x 10(15) cm(-2) have been implanted into a GaN thin film grown on sapphire substrates. The diffusion behavior of these implanted Li ions in GaN thin film at different temperature anneals was studied using secondary ion mass spectrometry. In general, the diffusion profiles show relatively little movement of Li in the GaN thin film for temperatures up to 700 degrees C. At low-temperature anneals (< 500 degrees C), up-hill diffusion dominated the Li profiles and at high-temperature anneals (> 800 degrees C), out-diffusion dominated the Li profiles. (c) 2006 Elsevier Ltd. All rights reserved.
Materials Science in Semiconductor Processing
Article; Proceedings Paper
"Diffusion behavior of implanted Li ions in GaN thin films studied by secondary ion mass spectrometry" (2006). Faculty Bibliography 2000s. 6535.