Diffusion profiles of low dosages chromium ions implanted into (100) crystalline silicon
Abbreviated Journal Title
Mater. Sci. Semicond. Process
Cr; Si; SIMS; diffusion; ion implantation; COMPLEXES; COPPER; SOLUBILITY; IRON; SI; Engineering, Electrical & Electronic; Materials Science, ; Multidisciplinary; Physics, Applied; Physics, Condensed Matter
Chromium ions with low dosages (1 x 10(12) and 1 x 10(13) cm(-2)) are implanted into silicon (100) crystalline substrates. Thermal anneals were carried out at different temperatures between 300 and 1000 degrees C to study the effects of ion implantation dose on the Cr diffusion profiles. Secondary ion mass spectrometry (SIMS) has been used to characterize the profiles of the Cr impurities. At 1 x 10(12) cm(-2) dosage and 500 degrees C anneal, the diffusivity of Cr in Silicon is determined to be 1.0 x 10(-14) cm(2) s(-1). (c) 2006 Elsevier Ltd. All rights reserved.
Materials Science in Semiconductor Processing
Article; Proceedings Paper
"Diffusion profiles of low dosages chromium ions implanted into (100) crystalline silicon" (2006). Faculty Bibliography 2000s. 6536.