Title

Lateral power MOSFET for megahertz-frequency, high-density DC/DC converters

Authors

Authors

Z. J. Shen; D. N. Okada; F. Y. Lin; S. Anderson;X. Cheng

Comments

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Abbreviated Journal Title

IEEE Trans. Power Electron.

Keywords

DC/DC converter; power metal-oxide semiconductor; field-effect; transistors (MOSFETs); synchronous rectifier; Engineering, Electrical & Electronic

Abstract

DODC converters to power future CPU cores mandate low-voltage power metal-oxide semiconductor field-effect transistors (MOSFETs) with ultra low on-resistance and gate charge. Conventional vertical trench MOSFETs cannot meet the challenge. In this paper, we introduce an alternative device solution, the large-area lateral power MOSFET with a unique metal interconnect scheme and a chip-scale package. We have designed and fabricated a family of lateral power MOSFETs including a sub-10 V class power MOSFET with a record-low R-DS(ON) of 1 m Omega at a gate voltage of 6 V, approximately 50% of the lowest RDS(ON) previously reported. The new device has a total gate charge Q(g) of 22 nC at 4.5 V and a performance figures of merit of less than 30 m Omega - nC, a 3 x improvement over the state of the art trench MOSFETs. This new MOSFET was used in a 100-W dc/dc converter as the synchronous rectifiers to achieve a 3.5-MHz pulse-width modulation switching frequency, 97%-99% efficiency, and a power density of 970 W/in(3). The new lateral MOSEFT technology offers a viable solution for the next-generation, multimegahertz, high-density dc/dc converters for future CPU cores and many other high-performance power management applications.

Journal Title

Ieee Transactions on Power Electronics

Volume

21

Issue/Number

1

Publication Date

1-1-2006

Document Type

Article

Language

English

First Page

11

Last Page

17

WOS Identifier

WOS:000234518600003

ISSN

0885-8993

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