Characterization of oxide charge trapping in ultrathin N2O oxide using direct tunneling current
Abbreviated Journal Title
ultrathin oxide; charge trapping; direct tunneling; GATE DIELECTRIC FILMS; RICH SILICON-NITRIDE; THERMAL-OXIDATION; INTERFACE STATES; EXCESS SILICON; OXYNITRIDE; MOSFETS; RELIABILITY; DEGRADATION; GENERATION; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter
This work studies the constant current stressing effects on the ultrathin (1.7-3 nm) oxides prepared by thermal oxidation of silicon in nitric oxide (N2O). A simple process evaluation formula for extracting the stress-induced flatband shift is developed and validated with capacitance-voltage measurements. We find that the flatband degradation does not follow the power law, rather an exponential law with a quasi-saturation region is observed as a result of the slow trap generation rate or the generation of positive charge during the constant current stressing. The sources of trap generation are attributed to the Si-Si bonds, P-b centers, and nitride-related defects due to the over-constrained silicon atoms in the Si3N4 clusters at the interface. (c) 2005 Elsevier Ltd. All rights reserved.
"Characterization of oxide charge trapping in ultrathin N2O oxide using direct tunneling current" (2006). Faculty Bibliography 2000s. 6714.