Title

Study of performance degradations in DC-DC converter due to hot carrier stress by simulation

Authors

Authors

C. Yu; L. Jiang;J. S. Yuan

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Microelectron. Reliab.

Keywords

Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

Abstract

The hot carrier effects on the 0.25 mu m high voltage LDMOS has been examined by the accelerated stress experiment. Although the model parameters changed slightly, the switching performances degraded significantly, which have been simulated with the compact models extracted from the test devices by ICCAP. A full bridge DC-DC converter with the compact models was proposed in Cadence SpectreRF. The simulated results show that the efficiency of the full bridge DC-DC converter degraded significantly due to the hot carrier effects.

Journal Title

Microelectronics Reliability

Volume

46

Issue/Number

9-11

Publication Date

1-1-2006

Document Type

Article; Proceedings Paper

DOI Link

http://dx.doi.org/10.1016/j.microrel.2006.07.079

Language

English

First Page

1840

Last Page

1843

WOS Identifier

WOS:000240776100078

ISSN

0026-2714

Recommended Citation

"Study of performance degradations in DC-DC converter due to hot carrier stress by simulation" (2006). Faculty Bibliography 2000s. 6744.
https://stars.library.ucf.edu/facultybib2000/6744