Ultraviolet photoluminescence from 3C-SiC nanorods
Abbreviated Journal Title
Appl. Phys. Lett.
CHEMICAL-VAPOR-DEPOSITION; SILICON-CARBIDE; VISIBLE PHOTOLUMINESCENCE; ROOM-TEMPERATURE; BLUE EMISSION; SI; FILMS; POLARIZATION; NANOCRYSTALS; Physics, Applied
An intensive sharp photoluminescence at 3.3 eV is observed from single-crystal 3C-SiC nanorods. Structural characterization reveals that the nanorods contain a fairly large amount of threefold stacking faults. We tentatively attribute the emission to these stalking faults, which structurally resemble 6H-SiC nano-layers of 1.5 nm embedded in a 3C-SiC matrix. The emission mechanism is discussed in terms of spontaneous polarization at the stacking faults. (c) 2006 American Institute of Physics.
Applied Physics Letters
"Ultraviolet photoluminescence from 3C-SiC nanorods" (2006). Faculty Bibliography 2000s. 6756.