Title

Ultraviolet photoluminescence from 3C-SiC nanorods

Authors

Authors

L. G. Zhang; W. Y. Yang; H. Jin; Z. H. Zheng; Z. P. Xie; H. Z. Miao;L. N. An

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Appl. Phys. Lett.

Keywords

CHEMICAL-VAPOR-DEPOSITION; SILICON-CARBIDE; VISIBLE PHOTOLUMINESCENCE; ROOM-TEMPERATURE; BLUE EMISSION; SI; FILMS; POLARIZATION; NANOCRYSTALS; Physics, Applied

Abstract

An intensive sharp photoluminescence at 3.3 eV is observed from single-crystal 3C-SiC nanorods. Structural characterization reveals that the nanorods contain a fairly large amount of threefold stacking faults. We tentatively attribute the emission to these stalking faults, which structurally resemble 6H-SiC nano-layers of 1.5 nm embedded in a 3C-SiC matrix. The emission mechanism is discussed in terms of spontaneous polarization at the stacking faults. (c) 2006 American Institute of Physics.

Journal Title

Applied Physics Letters

Volume

89

Issue/Number

14

Publication Date

1-1-2006

Document Type

Article

Language

English

First Page

3

WOS Identifier

WOS:000241056900091

ISSN

0003-6951

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