Title
Hybrid II-VI and III-V compound double heterostructures and their properties
Abbreviated Journal Title
J. Electron. Mater.
Keywords
zinc oxide (ZnO); gallium nitride (GaN); heterostructures; photoluminescence (PL); electroluminescence (EL); scanning electron; microscopy (SEM); LIGHT-EMITTING-DIODES; BLUE; ULTRAVIOLET; GAN; Engineering, Electrical & Electronic; Materials Science, ; Multidisciplinary; Physics, Applied
Abstract
In this report, n-GaN/n-ZnO/p-GaN double heterostructures (DHs) were grown on sapphire substrate employing metal-organic chemical vapor deposition (MOCVD) and molecular-beam epitaxy (MBE) methods. Scanning electron microscopy (SEM) employed in both secondary electron (SE) and cathodoluminescence (CL) modes revealed high crystal and optical quality of the DH layers, indicating no significant interdiffusion of constituent elements during growth. The diode structures were fabricated whose current-voltage characteristics revealed rectifying behavior with a leakage current 2.12 x 10(-5) A and a forward current 7.8 x 10(-2) A at 10 V bias, and with threshold and breakdown voltages of 3.2 and -11 V , respectively. Under forward bias, an intense electroluminescence (EL) was observed, the spectrum of which depended on the injection current.
Journal Title
Journal of Electronic Materials
Volume
36
Issue/Number
4
Publication Date
1-1-2007
Document Type
Article; Proceedings Paper
Language
English
First Page
409
Last Page
413
WOS Identifier
ISSN
0361-5235
Recommended Citation
"Hybrid II-VI and III-V compound double heterostructures and their properties" (2007). Faculty Bibliography 2000s. 6821.
https://stars.library.ucf.edu/facultybib2000/6821
Comments
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