Hybrid II-VI and III-V compound double heterostructures and their properties
Abbreviated Journal Title
J. Electron. Mater.
zinc oxide (ZnO); gallium nitride (GaN); heterostructures; photoluminescence (PL); electroluminescence (EL); scanning electron; microscopy (SEM); LIGHT-EMITTING-DIODES; BLUE; ULTRAVIOLET; GAN; Engineering, Electrical & Electronic; Materials Science, ; Multidisciplinary; Physics, Applied
In this report, n-GaN/n-ZnO/p-GaN double heterostructures (DHs) were grown on sapphire substrate employing metal-organic chemical vapor deposition (MOCVD) and molecular-beam epitaxy (MBE) methods. Scanning electron microscopy (SEM) employed in both secondary electron (SE) and cathodoluminescence (CL) modes revealed high crystal and optical quality of the DH layers, indicating no significant interdiffusion of constituent elements during growth. The diode structures were fabricated whose current-voltage characteristics revealed rectifying behavior with a leakage current 2.12 x 10(-5) A and a forward current 7.8 x 10(-2) A at 10 V bias, and with threshold and breakdown voltages of 3.2 and -11 V , respectively. Under forward bias, an intense electroluminescence (EL) was observed, the spectrum of which depended on the injection current.
Journal of Electronic Materials
Article; Proceedings Paper
"Hybrid II-VI and III-V compound double heterostructures and their properties" (2007). Faculty Bibliography 2000s. 6821.