A robust polysilicon-assisted SCR in ESD protection application
Abbreviated Journal Title
J. Zhejiang Univ.-SCI A
electro-static discharge (ESD); silicon-controlled rectifier (SCR); robustness performance; polysilicon-assisted; human body model (HBM); LATCH-UP; DESIGN; DEVICES; ICS; Engineering, Multidisciplinary; Multidisciplinary Sciences; Physics, ; Applied
A novel polysilicon-assisted silicon-controlled rectifier (SCR) is presented and analyzed in this paper, which is fabricated in HHNEC's 0.18 mu m EEPROM process. The polysilicon-assisted SCRs take advantage of polysilicon layer to help by pass electro-static discharge (ESD) current without occupying extra layout area. TLP current-voltage (I-V) measurement results show that given the same layout areas, robustness performance of polysilicon-assisted SCRs can be improved to 3 times of conventional MLSCR's. Moreover, one-finger such polysilicon-assisted SCRs, which occupy only 947 mu m(2) layout area, can undergo 7-kV HBM ESD stress. Results further demonstrate that the S-type I-V characteristics of polysilicon-assisted SCRs are adjustable to different operating conditions by changing the device dimensions. Compared with traditional SCRs, this new SCR can bypass more ESD currents and consumes smaller IC area.
Journal of Zhejiang University-Science A
"A robust polysilicon-assisted SCR in ESD protection application" (2007). Faculty Bibliography 2000s. 6995.