Evaluation of RF capacitance extraction for ultrathin ultraleaky SOI MOS devices
Abbreviated Journal Title
IEEE Electron Device Lett.
capacitance measurement; inversion oxide thickness; leakage current; radio frequency (RF; S-parameter; VOLTAGE CHARACTERISTICS; HIGH LEAKAGE; GATE OXIDE; TRANSISTOR; RECONSTRUCTION; DIELECTRICS; DESIGN; MODEL; HBTS; Engineering, Electrical & Electronic
This letter evaluates a radio-frequency (RF) method to extract the gate capacitance for SOI MOSFETs with ultrathin ultraleaky gate dielectrics. Conventional methods such as two-element and three-element methods using precision impedance analyzer were also compared. The RF method scans the RF capacitance data, assesses its lower and upper limits, and extracts the SOI gate capacitance accurately independent of gate oxide thickness.
Ieee Electron Device Letters
"Evaluation of RF capacitance extraction for ultrathin ultraleaky SOI MOS devices" (2007). Faculty Bibliography 2000s. 7.